Elad Koren

Elad Koren
Experienced Researcher
IBM Research Zurich

Academic background

2007-2012: Ph.D. degree in Electrical Engineering, Tel-Aviv University, Israel.

2004-2006: M.Sc. degree in Chemistry, Bar-Ilan University, Israel.

2001-2004: B.Sc. degree in Biophysics, Bar-Ilan University, Israel.

Current research topic (post-doc)

Nanoelectromechanical switch devices

The traditional scaling of CMOS technology is increasingly constrained by power limitations. Therefore the microelectronic industry is researching radically new devices that drastically improve the energy efficiency of microelectronic systems. One promising technology is based on Nanoelectromechanical (NEM) switches, which potentially offer significant improvements in energy efficiency. In this project, we are investigating the viability of this technology by developing a competitive and manufacturable device, by performing materials research to address inherent reliability issues, and by developing tools and methodologies to build complex logic based on novel NEM switch devices.

Selected publications

  1. Koren, E.; Sutter, E.; Bliznakov, S.; Ivars-Barcelo, F.; Sutter, P.; “Isolation of high quality graphene from Ru by solution phase intercalation”, Applied Physics Letters 2013, 121602, (103).
  2. Koren, E.; Rosenwaks.Y; Hemesath.E.  R.; Lauhon.L.  J.; “Measurement of the depletion region in individual doped and undoped silicon nanowires”, Applied Physics Letters 2011, 99, (22), 3521.
  3. Koren, E.; Elias, G.; Boag, A.; Hemesath, E., Lauhon, L.J; Rosenwaks, Y.; “Direct measurement of deep traps in a single silicon nanowire”, Nano Letters 2011, 11, (6), 2499-2502.
  4. Koren, E.; Givan, U.; Hemesath, E. R.; Lauhon, L. J.; Rosenwaks, Y.; ”Obtaining uniform dopant distribution in VLS-Grown Si nanowires”, Nano Letters 2011, 11, (1), 183-187.
  5. Koren, E.; Berkovitch, N.; Rosenwaks, Y.; “Measurement of active dopant distribution and diffusion in individual Silicon nanowires”, Nano Letters 2010, 10, (4), 1163-1167.
  6. Koren, E.; Rosenwaks, Y.; Allen, J. E.; Hemesath, E. R.; Lauhon, L. J.; “Nonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy”, Applied Physics Letters 2009, 95, (9).